SSC8033GS3 p-channel enhancement mode mosfet z features z applications ? load switch ? dcdc conversion ? tft panel power switch z pin configuration vds vgs rdson typ id 52mr@-10v -30v 20v 68mr@-4v5 -4.2a z general description this device is produced with high cell density, dmos trench technology, which is especially used to minimize on-state resistance. this device is particularly suited for low voltage application such as portable equipment, power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. top view z package information 1 / 4 http://www.spirit-semi.com ssc-3v1 free datasheet http://www.ndatasheet.com
SSC8033GS3 2 / 4 http://www.spirit-semi.com ssc-3v1 z absolute maximum ratings @t a = 25 unless otherwise noted parameter symbol limit unit drain-source voltage v dss -30 v gate-source voltage v gss 20 v continuous t a =25c -4.2 a drain current (note 1) pulsed (note 2) i d -16 a total power dissipation (note 1) p d 1 w operating and storage juncti on temperature range t j , t stg -55 to +150 c z electrical characteristics @ta = 25 unless otherwise noted parameter symbol test conditions min typ max unit off characteristics drain?source breakdown voltage v (br)dss v gs = 0 v, i d = -250 a -30 -- -- v zero gate voltage drain current i dss v ds = -24 v, v gs = 0 v -- -3 -200 na gate?body leakage current i gss v gs = 20 v, v ds = 0 v -- 1.5 50 na on characteristics gate threshold voltage v gs(th) v ds = v gs , i d =-250 a -1 -1.3 -3 v v gs = -10 v, i d = -4.2 a -- 52 60 drain?source on?state resistance r ds(on) v gs = -4.5 v, i d = -2 a -- 68 82 mr forward transconductance g fs v ds = -5 v, i d = -6 a -- 12 -- s dynamic characteristics input capacitance c iss -- 550 -- output capacitance c oss -- 60 -- reverse transfer capacitance c rss v ds = -15 v, v gs = 0 v, f = 1.0 mhz -- 50 -- pf switching characteristics turn?on delay time t d(on) -- 8.6 -- turn?off delay tim t d(off) v ds = -15 v, r l = 2.5r, v gs = -10v, r gen =3r -- 28.2 -- ns drain-source diode characteristics and maximum ratings diode forward voltage v sd v gs = 0 v, i s = -1 a -- -0.81 -- v note: 1. the value of p d is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. the current rating is based on the dc thermal resistance rating. 2. repetitive rating, pulse width limited by junction temperature. free datasheet http://www.ndatasheet.com
SSC8033GS3 z typical performance characteristics 3 / 4 http://www.spirit-semi.com ssc-3v1 01234 0 2 4 6 8 10 12 14 0.00.51.01.52.0 0 3 6 9 12 15 125 o c 85 o c 25 o c -55 o c i d , drain current(ma) v gs , gate-to-source voltage(v) figure 2. transfer characteristics 5 v gs =4v v gs =4.5,5v v gs =3.5v v gs =3v v gs =2.5v v gs =1.2,1.5,1.8,2v i d , drain current (a) v ds , drain-source voltage (v) figure 1. output characteristics 0 5 10 15 20 0 100 200 300 400 500 600 700 800 crss coss ciss c, capacitance(pf) figure 3. capacitance v ds , drain-to-source voltage(v) -50 0 50 100 150 0 10 20 30 40 50 60 70 80 90 100 v gs =10v i d =500ma v gs =4.5v r ds(on) ,on resistance (mr) tj, junction temperature ( o c) figure 4. on resistance vs. temperature 0.0 0.3 0.6 0.9 1.2 1.5 0.01 0.1 1 25 o c is, source-drain current (a) v sd , body diode forward voltage (v) figure 6.body diode forward voltage -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 v ds =24.0v i d =10ma v th , gate-source threshold voltage (v) tj, junction temperature ( o c) figure 5. gate threshold vs. temperature free datasheet http://www.ndatasheet.com
SSC8033GS3 4 / 4 http://www.spirit-semi.com ssc-3v1 disclaimer spirit-semi reserves the right to make changes without furthe r notice to any products herein to impro ve reliability, function or design. spirit-semi does not assume any liability arising out of the application or use of any product or circuit described herein; ne ither does it convey any li cience under its patent rights, nor the rights of others. the graphs provided in this document are statistical summaries based on a limited number of samples and are provided for informational purpose only. the performance characteristics listed in them are not tested or guaranteed. in some graphs, the data presented ma y be outside the specified operating range (e.g,. outside specified power supply range ) and therefore outside the warranted range. free datasheet http://www.ndatasheet.com
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